BUL67 high voltage fast-switching npn power transistor n stmicroelectronics preferred salestype n high ruggedness n npn transistor n high voltage capability n minimum lot-to-lot spread for reliable operation n very high switching speed n fully characterized at 125 o c applications n electronics tranformer for halogen lamps n switch mode power supplies description the BUL67 is manufactured using high voltage multiepitaxial mesa technology for cost-effective high performance. it uses a hollow emitter structure to enhance switching speeds. the bul series is designed for use in lighting applications and in low cost switch-mode power supplies. ? internal schematic diagram february 2003 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 700 v v ceo collector-emitter voltage (i b = 0) 400 v v ebo emitter-base voltage (i c = 0) 9 v i c collector current 10 a i cm collector peak current (t p < 5 ms) 18 a i b base current 3.5 a i bm base peak current (t p < 5 ms) 7 a p tot total dissipation at t c = 25 o c 100 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 to-220 1/6
thermal data r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 1.25 62.5 o c/w o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 700 v v ce = 700 v t c = 125 o c 100 500 m a m a i ceo collector cut-off current (i b = 0) v ce = 400 v 250 m a v ceo(sus) collector-emitter sustaining voltage i c = 100 ma l = 25 mh 400 v v ebo emitter-base voltage (i c = 0) i e = 10 ma 9 v v ce(sat) * collector-emitter saturation voltage i c = 3 a i b = 0.6 a i c = 4 a i b = 0.8 a i c = 6 a i b = 1.5 a 0.8 1 1.5 v v v v be(sat) * base-emitter saturation voltage i c = 3 a i b = 0.6 a i c = 4 a i b = 0.8 a i c = 6 a i b = 1.5 a 1.2 1.3 1.5 v v v h fe * dc current gain i c = 1.5 a v ce = 3 v i c = 10 ma v ce = 5 v 15 10 50 t s t f inductive load storage time fall time i c = 3 a v cl = 250 v i b1 = 0.6 a i b2 = -1.2 a l = 200 m h 2.1 100 3.2 180 m s ns t s t f inductive load storage time fall time i c = 3 a v cl = 250 v i b1 = 0.6 a i b2 = -1.2 a l = 200 m h t c = 125 o c 3 180 m s ns * pulsed: pulse duration = 300 m s, duty cycle 1.5 % safe operating areas derating curve BUL67 2/6
dc current gain collector emitter saturation voltage inductive fall time dc current gain base emitter saturation voltage inductive storage time BUL67 3/6
(1) fast electronic switch (2) non-inductive resistor (3) fast recovery rectifier inductive fall time inductive storage time reverse biased soa rbsoa and inductive load switching test circuits BUL67 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.052 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10.00 10.40 0.394 0.409 l2 16.40 0.645 l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 m 2.60 0.102 dia. 3.75 3.85 0.147 0.151 p011ci to-220 mechanical data BUL67 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2003 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com BUL67 6/6
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